The researchers have designed a magnetic semiconductor memory device, using GaMnN thin films, which utilizes both the charge and spin of electrons at room temperature.
This is a major breakthrough, as previous devices that used magnetic semiconductors (GaMnAs) and controlled electron spin were only functional at 100 K (or -173 Celsius).
By controlling the spin of electrons, the new device represents a significant advance in semiconductor efficiency and speed.
The new device is also an advance on earlier experimental models because it uses only 5-6 volts to switch the bias of the electrons. Previous cold-temperature devices used much higher voltage. (ANI)